收藏本站
ZXM62P02E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-20
V
Gate- Source Voltage
V GS
± 12
V
Continuous Drain Current (V GS =-4.5V; T A =25°C)(b)
I D
-2.3
A
(V GS =-4.5V; T A =70°C)(b)
-1.7
Pulsed Drain Current (c)
I DM
-13
A
Continuous Source Current (Body Diode)(b)
I S
-1.9
A
Pulsed Source Current (Body Diode)(c)
I SM
-13
A
Power Dissipation at T A =25°C (a)
P D
1.1
W
Linear Derating Factor
8.8
mW/°C
Power Dissipation at T A =25°C (b)
P D
1.7
W
Linear Derating Factor
13.6
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE 1 - JU NE 2004
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ZXM62P03E6TA MOSFET P-CH 30V 2.6A SOT-23-6
ZXM64N02XTC MOSFET N-CHAN 20V MSOP8
ZXM64N035L3 MOSFET N-CH 35V 13A TO-220-3
ZXM64P02XTC MOSFET P-CHAN 20V MSOP8
ZXM64P035L3 MOSFET P-CH 35V 12A TO-220-3
ZXM64P03XTC MOSFET P-CHAN 30V MSOP8
ZXM66P02N8TC MOSFET P-CHAN 20V 8SOIC
ZXM66P03N8TA MOSFET P-CH 30V 7.9A 8-SOIC
相关代理商/技术参数
ZXM62P02E6TA-CUT TAPE 制造商:DIODES 功能描述:ZXM62P02E6 20 V 0.2 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23-6
ZXM62P02E6TC 功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62P03E6 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 30V, -1.5A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes
ZXM62P03E6 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6
ZXM62P03E6_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P03E6TA 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62P03E6TC 功能描述:MOSFET 30V P Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62P03G 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET